国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） H01（7） B82（3）
IPC小类 C01B（7）
IPC H01L051/00（7）
发明人
公开年 2015（3） 2016（3）
申请年 2015（7）
专利权人

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Method for forming nano-gaps in graphene used in e.g. electronic device, involves applying voltage across third region of single layer graphene such that nano-gap extending across the entire width of single layer graphene is formed.

BRIGGS G A D, MOL J A

Organic solar energy battery device, has electrode formed with foamy thin film, where donor material of photoactive layer is enriched at side of transport layer, and heterojunction structure formed by graphene and donor material.

LI H, XIA S, XIE F

New ortho-terphenyl derivatives used for preparing graphene nanoribbons for thin film semiconductor for use in optical device, such as organic field effect transistor device, organic photovoltaic device or organic light-emitting diode.

SCHWAB M G, MULLEN K, FENG X, DUMSLAFF T, RUFFIEUX P, FASEL R, MUELLEN K

Method for preparing graphene layer of e.g. electronic device, involves heating portion of graphene oxide layer by laser irradiation at specific laser output power, so that portion of graphene oxide is chemically reduced to graphene.

BALKENENDE A R, GIESBERS A J M, VAN DER TEMPEL L