国家/地区 美国（20） 世界知识产权组织（15） 韩国（14） 中国（9） 欧洲专利局（EPO）（4） 日本（3） 台湾（2）
IPC部 B（28）
IPC大类 C01（28）
IPC小类 C01B（28）
IPC C01B031/04（20） C01B031/02（18） C23C016/26（17）
B82Y040/00（12） B82Y030/00（9） B82B003/00（5）
C01B032/186（5） C23C016/44（5） C23C016/02（4）
B01J019/18（3） B32B038/10（3） C23C016/06（3）
H01G009/042（3） H01G011/36（3） H01L021/02（3）
发明人 CHOI J（3） LEE J（3） PARK S（3）
HAYASHI K（2） JEONG S（2） JUNG M（2）
JUNG Y（2） LEE Y（2） MOON J（2）
PARK I K（2） PARK J H（2） ROH Y（2）
SHIN H（2） YEON S（2） YOON J（2）
公开年 2014（28）
申请年 2013（16）  2014（7）  2012（5） 
专利权人 SAMSUNG ELEC.（4） UNIV SUNGKYU.（4） HANWHA TECHW.（2） LG ELECTRONI.（2）
SAMSUNG TECH.（2） SHENZHEN CHI.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on DNA pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Patterning a graphene in the manufacturing of semiconductor chip, by forming a DNA pattern and forming graphene on pattern, where pattern is formed by forming metal ion pattern on a substrate and adsorbing a DNA structure on ion pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing graphene structure of 1-5 layers or controlling number of layers, involves introducing common substrate or substrate with powdered metal or substrate with definite pattern of metal inside reactor for chemical vapor deposition.

BERTRAN SERRA E, FREIRE SOLER V M, RAMIREZ SANCHEZ A, PASCUAL MIRALLES E, ANDUJAR BELLA J L

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Method of preparing graphene layers on metallic substrate for e.g. paint, involves annealing metallic substrate at initial temperature, cooling for graphene growth and contacting carbon vapor with substrate at final temperature.

YIN Z, DU Z, ZHANG H, ZHU M

Hydrophobic nano-graphene laminate used as graphene device e.g. graphene electrode, comprises trifluoromethyl-functionalized hollow spherical material with diameter of preset range, and has thickness and contact angle of preset range.

JANG J H, LEE J S