国家/地区 美国（9） 世界知识产权组织（8） 日本（4） 中国（3） 韩国（3） 台湾（2）
IPC部 C（9）
IPC大类 C01（9） B82（8） H01（6）
B05（4） B32（4） C23（4）
IPC小类 C01B（9）
IPC C01B031/02（9）
发明人 MILLER S A（4） MILLER S（3） YAGER T A（2）
公开年 2013（4） 2012（2） 2014（2）
申请年 2012（3）  2011（2）  2013（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（9）

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Encapsulating a substance with graphene involves combining graphene oxide and water to form aqueous solution; contacting reducing agent and substance; mixing aqueous solution with reducing agent and substance; and producing graphene.

MILLER S A

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Detecting defect in graphene sample involves exposing sample having graphene and some defects, to gas under specific condition, removing gas, placing obtained marked sample in detector system, and detecting marks bonded to defects in sample.

MILLER S A, MILLER S

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A