国家/地区 日本（5） 美国（4） 世界知识产权组织（2）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC B32B009/00（6）
发明人 TATENO Y（6）
公开年 2017（3）
申请年 2017（2） 
专利权人 SUMITOMO ELE.（6） UNIV TOHOKU（4）

Layered body useful in electronic element, such as transistor, comprises base portion comprising silicon carbide and having surface which is silicon surface, and carbon atom thin film arranged over surface and comprising carbon atoms.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Laminate used for electronic device, comprises graphene film and base portion comprising silicon carbide, and has ion mass distribution in stack depth direction obtained by using bismuth ions as primary ions and cesium ions as sputter ions.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, heating upper surface of silicon carbide layer using gas, and forming graphene layer on surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y