国家/地区 美国（21）
IPC部 B（21）
IPC大类 C01（21） B82（19） B32（11）
H01（10） C08（6） B01（5）
B05（5） C07（5） C09（4）
C23（4） B21（2） D01（2）
G01（2） G02（2）
IPC小类 C01B（21）
IPC C01B031/00（21）
发明人 KIM H（2） KIM H K（2） RUOFF R S（2）
公开年 2011（21）
申请年 2010（10）  2011（8）  2009（3） 
专利权人 RUOFF R S（2） UNIV CALIFOR.（2） UNIV TEXAS S.（2） VORBECK MATE.（2）

Making graphene involves making graphite oxide substrate by exfoliating graphene oxide sheet in aqueous solution, neutralizing and centrifuging the solution, and evaporating/spin coating the solution on material; and exposing to laser beam.

SOKOLOV D A, SHEPPERD K R, ORLANDO T M

Composition, useful in e.g. high speed transistors, electronic devices, sensors, solar cells, optoelectronic devices, logic devices, ultra capacitors, and actuators, comprises unaffixed graphene particulates.

BERRY V, MOHANTY N, MOORE D S

Graphene tape useful as electrode in a battery is free-standing, and has specific surface area, and has specific electrical conductivity.

KORKUT S, MILIUS D L, ROYMAYHEW J D, DABBS D M, AKSAY I A

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Doped, at least partially saturated graphene, useful in electronic devices including transistors, and as conductors including microcircuits or bulk conductors.

GIUSTINO F, FERRARI A C, SAVINI G

Depositing graphene material on substrate comprises providing suspension of graphene oxide platelets and substrate, and applying electric field across the suspension so as to deposit portion of graphene oxide platelets on substrate.

RUOFF R S, AN S J, STOLLER M, EMILSSON T, AGNIHOTRI D

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Producing graphene, useful in spintronic device, comprises spacing source of silicon from silicon carbide substrate in pressure vessel, reducing pressure to vacuum and heating silicon source to evaporate silicon and heating the substrate.

LANZARA A, SCHMID A K, YU X, HWANG C, KOHL A, JOZWIAK C M

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J