国家/地区 美国（11） 世界知识产权组织（10） 中国（7） 韩国（6） 欧洲专利局（EPO）（5） 日本（5） 德国（2） 英国（2） 香港（2） 土耳其（2） 台湾（2）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B032/186（11）
发明人 GUO S（2） OZKAN C S（2） OZKAN M（2）
公开年 2013（4） 2014（4） 2015（3）
申请年 2013（11）
专利权人 UNIV CALIFOR.（2）

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Controllably forming Bernal-stacked graphene layers involves cleaning surface of catalyst, annealing, applying carbon source onto the cleaned and annealed surface of the catalyst in reaction chamber, and growing the graphene layers on it.

TOUR J M, SUN Z, RAJI A O

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Coating, useful for reducing corrosion, preferably oxidative corrosion, at the surface of a metal, comprises silicon-doped graphene layers.

PAPAKONSTANTINOU P

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A