国家/地区 中国（141）
IPC部 C（141）
IPC大类 C01（141）
IPC小类 C01B（141）
IPC C01B032/186（141）
发明人 LIU Z（10） LI Z（7） WANG X（7）
LI X（6） LI Y（6） WANG W（6）
ZHANG X（6） ZHANG Y（6） SHI H（5）
WANG H（5） ZHANG J（5） CHEN L（4）
DUAN Y（4） LI J（4） LIU X（4）
公开年 2020（22） 2021（20） 2017（18） 2022（16） 2015（11） 2018（10） 2019（9） 2012（8） 2023（8） 2016（7） 2014（5） 2013（4） 2011（2）
申请年 2022（20）  2020（19）  2019（17）  2021（15）  2016（14）  2017（12）  2014（10）  2018（9）  2013（7）  2012（6）  2015（6）  2011（3）  2010（2） 
专利权人 BEIJING GRAP.（5） CHINESE ACAD.（5） SAMSUNG ELEC.（5） UNIV PEKING（5）
CHONGQING GR.（4） CORNING INC（4） SHANGHAI INS.（4） UNIV CALIFOR.（4）
CHANGZHOU SI.（3） JX NIPPON MI.（3） NIPPON MININ.（3） NIPPON MININ.（3）
UNIV HUAZHON.（3） AIXTRON SE（2） CALIFORNIA I.（2） CENT ADVANCE.（2）
CHANGZHOU 2D.（2） CRRC IND RES.（2） GUARDIAN GLA.（2） GUARDIAN IND.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Preparing chiral graphene on gold substrate involves placing precursor molecule capable of synthesizing tetra anthracene alkene in crucible, heating, undergoing Ullman reaction and dehalogenation reaction by precursor molecules containing halogen groups and performing carbon-carbon coupling.

CAI J, ZHANG H, LU J

Iron-based substrate for producing graphene, is derived from factory waste carbon iron sheet having specified thickness, surface roughness and carbon content.

ZANG X, CAO N, QI H, SHAO Q

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S