国家/地区 中国（12）
IPC部 C（12）
IPC大类 C01（12） C23（12） B01（5）
H01（5） B82（3）
IPC小类 C01B（12）
IPC C01B031/04（12）
发明人 JUNG M（2） MOON J（2） SHI Y（2）
公开年 2014（12）
申请年 2013（6）  2014（6） 
专利权人 LG ELECTRONI.（2） SHENZHEN CHI.（2） SHI Y（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Preparing multi-graphene film, by electrochemical polishing copper substrate, washing substrate using deionized water, further washing using ethanol and then drying, and performing chemical vapor deposition on substrate in growth chamber.

HAO Y, SHI Y, WANG D, ZHANG C, ZHANG J, ZHANG P

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Forming thin graphene film involves heating graphene growth substrate in high temperature area, applying accelerating and screening electric fields in anode, then heating, introducing carbonaceous gas and screening negatively charged ions.

YAN S, ZONG Z, MA Y, NIU S, TATACHENKO V