国家/地区 世界知识产权组织（28）
IPC部 C（28）
IPC大类 C01（28） C23（28） H01（15）
B82（13） B32（8） B01（6）
C30（3） B05（2） C03（2）
IPC小类 C01B（28）
IPC C23C016/26（28）
发明人 HONG B H（5） DING G（4） XIE X（4）
AHN J（3） AHN J H（3） HONG B（3）
JIANG M（3） KIM H（3） BAE S（2）
BAE S K（2） DENG P（2） DI Z（2）
GONG Q（2） GUO H（2） JEON S（2）
公开年 2012（28）
申请年 2012（15）  2011（11）  2010（2） 
专利权人 CHINESE ACAD.（4） HANWHA TECHW.（4） SAMSUNG TECH.（4） SHANGHAI INS.（4）
GRAPHENE SQU.（3） KOREA ADV IN.（3） UNIV SUNGKYU.（3） DENG P（2）
EMPIRE TECHN.（2） GUO H（2） ISLAND GIANT.（2） KOREA ADVANC.（2）
LEI T（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV XIDIAN（2）
ZHANG K（2） ZHANG Y（2）

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Patterning graphene involves forming passivation material pattern on growth substrate, defining inverse pattern of exposed surface that facilitates graphene growth; and supplying carbon-containing gas to pattern to form patterned graphene.

HOFMANN M, KONG J

Apparatus for manufacturing graphene film, has heater that is provided to heat domain of catalyst substrate which is arranged to contact gas gushing out from gas jet unit.

YOON J, HYEOK Y J, YOON J H

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I