国家/地区 中国（43） 美国（22） 韩国（19） 世界知识产权组织（19） 日本（12） 欧洲专利局（EPO）（9） 印度（6） 台湾（6） 澳大利亚（4） 加拿大（3） 英国（3） 德国（2） 俄罗斯（2）
IPC部 C（77）
IPC大类 C01（77）
IPC小类 C01B（77）
IPC C23C016/26（42） C01B032/186（38） C01B032/194（25）
C23C016/02（17） B82Y040/00（13） B82Y030/00（11）
C01B032/184（11） C23C016/56（8） C23C016/04（7）
C23C016/44（7） C23C016/52（7） C01B032/05（6）
C01B032/198（6） C23C014/35（6） C01B032/15（5）
发明人 WANG X（4） LI L（3） LI X（3）
NAGEL C J（3） SHIN H（3） YANG J（3）
ZHANG Q（3） BI C（2） BRODEUR C L（2）
BYUN K（2） BYUN K E（2） CHENG J（2）
FAN L（2） GLASS H（2） GUINEY I（2）
公开年 2021（49） 2020（23） 2022（5）
申请年 2020（77）
专利权人 QUANTUM ELEM.（3） SAMSUNG ELEC.（3） PARAGRAF LTD（2） UNIV CHONNAM.（2）
UNIV YANGZHO.（2） XI AN SPECIA.（2）

Processing simple and controllable molecular evaporation useful in e.g. field of surface scientific research comprise e.g. placing molecule in sealed crucible, placing crucible in stainless steel cup filled with liquid nitrogen, and observing current display number on molecular pump controller.

YANG X, MA Z, LU H

Nitrogen doping in chemical vapor deposition (CVD) graphene, by initiating by controller, and performing annealing process using ammonia gas in pressure chamber on CVD graphene at pre-defined temperature for pre-defined period of time, where pressure chamber is maintained at atmospheric pressure.

SINGLA R, KOTTANTHARAYIL A

Manufacturing metal-carbon composite useful for high thermal conductivity heat dissipation material, comprises synthesizing carbon material on porous catalyst surface, complexing metal and controlling porosity of metal-carbon composite.

LEE S H, HAJUNSEOK, RHO H K, RYU H S

Deposition of two-dimensional layers on substrate in process chamber, involves heating substrate, feeding reactive gas of carbon-containing chalcogenide, and adjusting substrate temperature, process chamber pressure, and partial pressure of reactive gas so that graphene is deposited as layer.

MCALEESE C, CONRAN B R, TEO K B K

Preparation method of copper-based graphene, involves removing copper-based graphene precursor from impurities by solvent separation method, and drying copper-based graphene precursor to form copper-based graphene finished product.

WU G, QIAN T, CAO H, MA Y, SHEN H

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Multielement co-doped graphene quantum dots for e.g. supercapacitor electrode, comprise element doped by plasma treatment by placing graphene quantum dots doped with other element on moving stage that reciprocates, rotates, or vibrates in horizontal direction to uniformly plasma-treat quantum dots.

SHIM W, SIM Y, KIM J Y, MUN J H, HO J C, KIM S J

Silicon-based-carbon composite useful in cathode material of lithium secondary battery, comprises core-shell structure, where core includes e.g. silicon and magnesium silicate, and the shell includes first and second carbon layers.

HYUN L J, HUNSOO P, LEE S, HEE L, LIM J

Producing two-dimensional material-polymer composite useful in transparent electrode, sensor, memory and solar cell, comprises e.g. forming monomer layer interposed between first and second two-dimensional material layer.

SUK S H, YUNE S I

Continuous production apparatus of multiple types of carbon film, comprises reduction section for reducing substrate placed on belt conveyor, and raw material carbon source supply section that supplies raw material carbon source.

WATANABE J