国家/地区 美国（9）
IPC部 B（9）
IPC大类 B82（9）
IPC小类 B82Y（9）
IPC B82Y099/00（9）
发明人 HUNLEY D P（2） HWANG T（2） STRACHAN D R（2）
公开年 2013（4） 2011（2） 2012（2）
申请年 2012（6）  2011（2） 
专利权人 SAMSUNG ELEC.（2） UNIV KENTUCK.（2）

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Membrane used to separate gas from fluid mixture including first gas e.g. neon and second gas, includes graphene layer perforated by nanoscale pores, and gas sorbent to contact surface of layer and direct gas adsorbed at sorbent into pores.

DUERKSEN G L, MILLER S A

Thermal and electrical conducting apparatus, useful for crystallographic control over construction, orientation and placement of carbon nanotubes, comprises few layer graphene film having thickness provided on substrate, and nanotubes.

STRACHAN D R, HUNLEY D P

Thermal and electrical conducting apparatus used in e.g. fuel cells and super capacitor electrodes comprises few layer graphene film having specific thickness; and carbon nanotubes crystallographically aligned with the graphene film.

STRACHAN D R, HUNLEY D P

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K