国家/地区 美国（21） 韩国（17） 世界知识产权组织（15） 中国（14） 日本（14） 欧洲专利局（EPO）（8） 台湾（6） 印度（5） 墨西哥（4） 俄罗斯（4） 西班牙（3）
IPC部 C（27）
IPC大类 C01（27）
IPC小类 C01B（27）
IPC C01B031/04（27）
发明人 HONG B H（4） VEERASAMY V（4） VEERASAMY V S（4）
AHN J（3） BAE S K（3） KIM H K（3）
LEE Y（3） AHN J H（2） BAE S（2）
CHOI J（2） CHOI J Y（2） CHUNG H（2）
CHUNG H J（2） GANG B S（2） GEUN K H（2）
公开年 2011（27）
申请年 2010（14）  2011（9）  2009（4） 
专利权人 UNIV SUNGKYU.（6） GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4）
SAMSUNG ELEC.（4） UNIV SUNGKYU.（4） GRAPHENE SQU.（2） SAMSUNG TECH.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） VEERASAMY V .（2）

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Producing two-dimensional nanomaterials comprises e.g. providing a mixture comprising e.g. graphene oxide particles and water, adding a sol precursor compound to the mixture, and reacting the mixture in a sol/gel process to form gel.

FENG X, IVANOVICI S, MUELLEN K, YANG S, MULLEN K

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition, involves pouring carbon gas to vacuum cavity and maintaining flow rate of hydrogen gas, and obtaining metal substrate deposited with graphene.

QU Y

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.

FUJII K, SHIMIZU A

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S