国家/地区 日本（2） 美国（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C23C016/56（7）
发明人 SHIN H（2） UMENO M（2）
公开年 2020（7）
申请年 2020（3）  2018（2）  2019（2） 
专利权人 SAMSUNG ELEC.（2） SIZU TECHNO .（2）

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S

Device for detecting alcohol concentration in blood through breath analysis, includes heating system is covered by a layer of tin oxide and graphene, and aluminum oxide microtubules is covered by a layer of aluminum oxide and graphene.

DHAMI H S, JOSHI R P, PANDEY A, PATEL K K

Preparing vertical branched graphene used as catalyst support in e.g. electrocatalytic process involves treating pristine vertical graphene with inert plasma in absence of introduced carbon source to develop vertical branched graphene.

HAN Z, TSOUNIS C, AMAL R

Method for manufacturing graphene for coating cantilever used in scanning probe microscope, involves generating surface wave plasma of source gas by microwave excitation to directly form graphene film on substrate without using catalyst.

BSHWAKARMA L, ADHIKARI S, SBASHI S, UMENO M, MABUCHI Y

Chemical doping of graphene film involves irradiating laser to graphene film immersed in melt containing metallic compound dissolved in solvent.

AMUR A, UMENO M

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C