国家/地区 美国（5） 中国（3） 欧洲专利局（EPO）（2） 英国（2） 日本（2） 韩国（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人
公开年 2012（3） 2013（3）
申请年 2012（6）
专利权人

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Forming graphene film (on surface of substrate) used in e.g. lasers, comprises locating carbon source at or in vicinity of surface, controlling ambient conditions, applying temporary change of condition at localized site and controlling.

DONG G

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y