国家/地区 美国（21）
IPC部 C（21）
IPC大类 C01（21）
IPC小类 C01B（21）
IPC C01B032/186（11） C23C016/26（11） C23C016/02（6）
H01L021/285（6） C01B032/184（5） C01B032/194（5）
B82Y040/00（4） H01L021/02（4） H01L021/768（4）
B82Y030/00（3） C01B032/182（3） C23C016/04（3）
C23C016/455（3） C23C016/48（3） H01L023/532（3）
发明人 BYUN K（2） CHEN Y（2） LEE C（2）
LEE E（2） LEE S（2） NAVEH D（2）
SHIN H（2） SHIN K（2） SONG H（2）
公开年 2022（21）
申请年 2022（11）  2021（10） 
专利权人 APPLIED MATE.（2） SAMSUNG ELEC.（2） UNIV BARILAN（2）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Preparing nanoparticles on a substrate for composite, involves depositing micro-sized particles or salt precursors on a substrate, and applying a rapid, high temperature thermal shock to the substrate and the micro-sized particles or the salt precursors.

YAO Y, CHEN Y, HU L

Reactor assembly comprises gas inlet and one or more gas outlets and reactor chamber containing nanoporous carbon material arranged within cup and covered with cap, where first porous frit defining floor of reactor chamber arranged within cup and covered with cap, and second porous frit.

BRODEUR C L, NAGEL C J

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Making solar cell involves depositing multiple nanoparticles on surface of chemical vapor deposition substrate, heating substrate and nanoparticles at sub-atmospheric pressure, and contacting gaseous mixture comprising methane and hydrogen with nanoparticles.

ELSAYED K A M, MAAROUF A A

Manufacturing wrinkled graphene comprises immersing polymeric substrate, wrinkled graphene, polystyrene sulfonic acid, or polystyrene substrate in water to remove polystyrene substrate by dissolving polystyrene sulfonic acid substrate.

HONG S, NARUTE P, NARUTEPHRASANT