国家/地区 韩国（4） 日本（3） 美国（2） 世界知识产权组织（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B031/02（8） C23C016/26（8） B01J019/08（2）
发明人 CHO S M（2） WON D K（2）
公开年 2012（8）
申请年 2010（8）
专利权人 SAMSUNG TECH.（2）

Formation of graphene-based device used in electronic field, involves depositing carbon on substrate having dielectric material, annealing carbon-deposited substrate, and forming ordered graphene on dielectric material.

KELBER J A, GADDAM S S, BJELKEVIG C L

Manufacture of graphene involves forming graphene into film on magnesium oxide.

FUJII K, SATO M

Manufacturing method of graphene, involves growing graphene on surfaces of floating sample in air.

JOO I L, CHAN Y H, KWONJAE Y, JUNG H K, YONG S Y, YONG H S, GEUN W L

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Graphene synthesis chamber has multiple through holes that are formed for connecting seating place and portal.

CHO S M, WON D K

Manufacture of graphene involves transferring base component comprising support layer, separation layer, and catalyst metal layer into chamber, passing carbon vapor source into chamber, and cooling base component.

CHO S M, WON D K

Formation of transparent conductive film for, e.g. solar cells, involves guiding camphor vapors on heated substrate, thermally decomposing vapors and forming graphene sheet, peeling sheet by etching, and affixing peeled sheet on target.

KALITA G, UMENO M, WAKITA K