国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B032/186（8）
发明人 ZHOU C（8）
公开年 2021（3） 2017（2） 2018（2）
申请年 2017（3）  2020（3） 
专利权人 13TH RES INS.（3） SAURER JIANG.（3）

Vertical lifting and rapid cooling graphene growth device has eight-inch quartz tube for graphene chemical vapor deposition growth, vacuum tube furnace, vertical guide rail, frame, water platform, vertical frame, and horizontal guide rails.

QIAN Z, LIANG H, ZHOU C

Hydrogen barrier coating for inner surface of hydrogen storage and transportation device, comprises deposited catalytic metal layer rich in catalytic metal ions formed on surface of substrate.

XIAO S, WU H, ZHOU C, CHEN G, SHI K

Preparing large-size clean graphene material used for optoelectronics, by growing graphene layer on surface of metal substrate, forming metal layer on graphene layer, forming photoresist layer, and adhering glue-containing soft film.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing silicon carbide-based twisted multilayer graphene material involves growing graphene materials on silicon carbide substrates, taking hydrogen as carrier gas and introducing gaseous carbon source to grow.

LIU Q, YU C, HE Z, GAO X, GUO J, ZHOU C, FENG Z

Auxiliary device for preparing graphene, comprises supporting body, buffer layer which is arranged on upper surface of supporting body, where buffering layer is provided with multiple penetrating buffer layer of hole.

GAO X, FENG Z, YU C, LIU Q, HE Z, ZHOU C, GUO J

Modified chemical vapor deposition for preparing uniform graphene material, involves selecting silicon carbide substrate, cleaning, drying, vacuumizing, turning on microwave power, heating and removing gas adsorbed on surface substrate.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z, YU C

Preparation of low-fold density graphene material involves taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing, turning on the microwave power, heating and reacting.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z

Preparation of nanocrystalline graphene on sapphire substrate, involves placing sapphire substrate in graphene plasma-enhanced chemical vapor deposition equipment, introducing inert gas, pretreating substrate in hydrogen atmosphere.

WEI C, FENG Z, LIU Q, HE Z, WANG J, SONG X, ZHOU C