国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） C23（7） H01（5）
B82（4） B32（3） C04（2）
C25（2） C30（2）
IPC小类 C01B（7）
IPC C23C016/56（7）
发明人 DENG P（2） GUO H（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）
公开年 2012（7）
申请年 2012（4）  2011（3） 
专利权人 DENG P（2） GUO H（2） LEI T（2） UNIV XIDIAN（2）
ZHANG K（2） ZHANG Y（2）

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Manufacture of graphene transparent thin film involves carrying out chemical vapor deposition of graphene film on substrate, coating polymethylmethacrylate or photoresist, and electrolyzing and separating film.

CHEN G, KONG D, LIANG Q, MEI J

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X