国家/地区 日本（44）
IPC部 B（44）
IPC大类 B82（44） C01（44） H01（25）
B32（12） B01（10） C23（10）
C25（7） C08（5） C22（5）
B05（4） B21（4） C07（4）
C09（4） C30（3） H05（3）
IPC小类 B82Y（44）
IPC B82Y040/00（44）
发明人 CHIBA G（4） CHIBA Y（4） NOMOTO K（4）
FENG X（3） KIMURA N（3） KOBAYASHI T（3）
KOKUNI T（3） MUELLEN K（3） MULLEN K（3）
OGUNI T（3） SHIMIZU K（3） TODORIKI H（3）
TODOROKI H（3） YOSHIHIRO C（3） BANDO M（2）
公开年 2013（21） 2012（20） 2014（3）
申请年 2012（44）
专利权人 SEMICONDUCTO.（6） JX NIPPON MI.（4） NIPPON MININ.（4） NIPPON MININ.（4）
BASF AG（3） BASF SE（3） SONY CORP（3） BASF CHINA C.（2）
HON HAI PREC.（2） HONGFUJIN PR.（2） JAPAN SCI T.（2） JAPAN SCI TE.（2）
MAX PLANCK G.（2） NIPPON MININ.（2） NOMOTO K（2） TODORIKI H（2）
UNIV MANCHES.（2） UNIV TSINGHU.（2）

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Formation of band-gap in graphene raw material used for e.g. light reception and light-emitting devices, involves forming graphene film on surface having nanosize porous holes active on graphene.

HASUO T, KUBOTA H, FUKUYAMA H, HOMMA Y, SAITO S, MASUDA H

Graphene structure for semiconductor device comprises substrate and graphene nano ribbon which is formed on the substrate and has predetermined width as prohibition body width as a semiconductor produces.

KATO T, HATAKEYAMA R

Gelatinizer for manufacture of metal nanoparticle and graphene comprises compound derived from amino acid and fatty acid.

DELBECQ F, ENDO H, KAWAI T

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Deionizing solution involves functionalizing graphene sheet apertures to repel first ions in solution that also inhibits transit of second ions and passing solution by flow path to form deionized solution on solution flow path output side.

HO G S, BENNETT R G, BEDWORTH P V, STETSON J B

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Etching graphene nanostructure, by providing piece of highly oriented pyrolytic graphite, analyzing first window, second window, and third window, and applying voltage gradient.

DARLING M J

Making graphene, comprises disposing metal lithium and graphite in solution of lithium salt in solvent to gather lithium ions and solvent molecules between adjacent layers of graphite to form graphite intercalation compound and peeling off.

HE X, WANG L, LI J, GUO J, SUN W, REN J, XIANGMING H, LI W, LI J J, GUO J W, SUN W T