国家/地区 日本（27）
IPC部 C（27）
IPC大类 C01（27） H01（27） C23（6）
B82（4） C07（4） C25（3）
B05（2） B32（2） G03（2）
IPC小类 C01B（27）
IPC C01B032/182（14） C01B032/194（11） H01M004/62（8）
C01B032/15（6） C01B032/18（6） C01B032/198（6）
H01M010/052（6） C01B032/186（5） H01L021/336（5）
H01L029/786（5） H01M010/0525（5） B82Y030/00（4）
C01B032/184（4） H01L023/532（4） H01M004/36（4）
发明人 TAMAKI E（4） KATAGIRI M（3） KAWASAKI M（3）
MIHASHI F（3） MITSUHASHI F（3） MIYAZAKI H（3）
OKADA M（3） SAKAI T（3） TATENO Y（3）
UENO M（3） FUKIDOME H（2） KADOMA H（2）
MOMMA H（2） OGUNI T（2） SEO S（2）
公开年 2018（15） 2017（12）
申请年 2017（27）
专利权人 TORAY IND IN.（4） TOSHIBA KK（4） SEMICONDUCTO.（3） SUMITOMO ELE.（3）
NAT INST ADV.（2） UNIV TOHOKU（2）

Graphene substrate used as wiring material, consists of substrate, graphene in which through-hole is laminated on substrate and penetrated in thickness direction, and fixing portion for fixing graphene to surface of substrate.

NARUTSUKA S, YAMADA J

New 15-methylheptacyclo-triaconta-pentadecaene precursor molecule used for manufacturing armchair-type graphene nanoribbons for graphene nanodevice used for electronic device.

YAMAGUCHI J

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Manufacturing graphene nanomesh for field effect transistor manufacture by depositing precursor molecule which has benzene rings to surface of metal substrate which has catalytic activity under vacuum and heating metal substrate.

SUZUKI H, SAKAGAMI H, KATAOKA T

Manufacture of reduced graphene used for e.g. electrode for lithium-ion battery, involves merging graphene oxide dispersion liquid and reducing agent liquid fed from independent flow paths, such that preset pressure is set at junction.

TAMAKI E

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

New graphene compounds useful in electrolyte, power storage device, semiconductor device, display device, light-emitting device, and memory device.

YAMAKAJI M, YAMAOGI M

Carbon material used for electrode material of electrical storage device, used in electrode sheet for capacitor, has carbon material main portion that is provided with graphene laminated structure.

SASAGAWA N, OHARA S

Electrical contact for forming e.g. connector, is produced using material including layer comprising carbon material which is single graphene layer or graphene laminate on base material comprising metal material having preset resistivity.

MORI K, SHIMIZU T