国家/地区 日本（3） 台湾（3） 英国（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/182（4） C30B029/02（4） C01B032/186（3）
C23C016/26（3） H01L021/02（3） C23C016/455（2）
C30B025/18（2） H01L021/20（2） H01L021/205（2）
发明人 DIXON S（2） GUINEY I（2）
公开年 2022（6）
申请年 2022（3）  2021（2） 
专利权人 PARAGRAF LTD（2） TOKYO ELECTR.（2）

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Substrate device useful for surface enhanced Raman scattering, comprises substrate with support surface, and graphene layer connected to support surface of substrate.

TAPASZTA LEVENTE, DOBRIK GERGELY, NEMESINCZE PATER, VANCSA PATER