国家/地区 中国（22） 美国（8） 世界知识产权组织（5） 欧洲专利局（EPO）（4） 台湾（3） 韩国（2）
IPC部 C（27）
IPC大类 C01（27）
IPC小类 C01B（27）
IPC C01B021/064（27）
发明人 LIU J（3） ALSHARAEH E（2） ALTHUBAITI N（2）
ARSALAN M（2） BAYHAN Z（2） GAO X（2）
LI Y（2） LI Z（2） LIU Y（2）
MUSSA Y（2） WANG H（2） WANG X（2）
XU Z（2） ZHANG Y（2）
公开年 2021（27）
申请年 2020（16）  2021（10） 
专利权人 SAUDI ARABIA.（2） UNIV NORTHWE.（2）

Preparing two-dimensional material nano-sheet using N,N-diethyl-meta-toluamide stripping used as inorganic filler for e.g. aerospace, comprises adding two-dimensional material into DEET, ultrasonically treating, removing unstripped two-dimensional material and centrifuging supernatant.

LIU R, LIU J, SONG J, NIE X, SANG X

Method for realizing dry transfer graphene continuous film, involves pressing PVA film on heterjunction at first preset temperature by using PVC film, and selecting second preset temperature as hardening temperature of PVA film.

XUE Z, GUO W, DI Z

Producing two-dimensional material-polymer composite useful in transparent electrode, sensor, memory and solar cell, comprises e.g. forming monomer layer interposed between first and second two-dimensional material layer.

SUK S H, YUNE S I

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Graphene/copper/micron particle composite material useful in e.g. graphene high-temperature heating ink for high-temperature heating bodies for electronic cigarette lighters, kettles, bakeware, heaters and electric ceramic stove, comprises micron particles, copper element and graphene.

LI N, WANG H, SONG Q, JIANG B

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Sp2-sp3 hybrid crystalline boron nitride has basic structural unit composed of sp2 hybridized graphite-like structural unit and sp3 hybridized diamond-like structural unit, where the two types of units are connected via coherent interface.

ZHAO Z, LUO K, SUN L, LIU B, HU W, HE J, YU D, TIAN Y, XU B, LIU Z, ZHAO Z S, HU W T, HE J L, YU D L, TIAN Y J, LIU Z Y

Terahertz modulator based on graphene/boron nitride heterogeneous structure for use e.g. in teraherz compressed sensing imaging comprises p-type silicon substrate, boron nitride film, graphene film and infrared laser beam.

WANG Z, WEN T

Hyperbolic super-surface for hypersurface imaging and light energy transmission device to form hyperlens based on graphene-boron nitride lateral heterojunction, has heterostructure layer that comprises periodic nano-grating structure formed by strip-shaped graphene and boron nitride layers.

WANG X, CHEN K

Transferring two-dimensional materials involves bonding the side of the growth substrate with the two-dimensional material and support layer through adhesive layer to obtain layered structure, removing growth substrate in etching solution.

LIU J, WANG H, XU Z, JIANG X