国家/地区 欧洲专利局（EPO）（18）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C01B031/04（18）
发明人 FENG X（7） MUELLEN K（7） MULLEN K（7）
FASEL R（4） MILLEN K（4） RUFFIEUX P（4）
SCHWAB M G（4） TOUR J（4） TOUR J M（4）
CAI J（3） TSAI J（3） DUMSLAFF T（2）
KOSYNKIN D（2） KOSYNKIN D V（2） NARITA A（2）
公开年 2013（5） 2011（4） 2015（3） 2016（3） 2014（2）
申请年 2012（4）  2013（4）  2010（3）  2015（3）  2011（2） 
专利权人 BASF SE（7） MAX PLANCK G.（7） BASF CHINA C.（6） UNIV RICE WI.（4）
BASF AG（3） UNIV RICE WI.（3） BASF SCHWEIZ.（2） EMPA EIDGENO.（2）

Magnetically separable iron nanoparticles supported on nitrogen doped graphene catalyst used e.g. in oxidant-free catalytic dehydrogenation of alcohols to value added product i.e. carbonyl with hydrogen as only by product.

BALARAMAN E, JAGADEESAN D, JAISWAL G, BORIKAR S P, EKAMBARAM B, DINESH J, GARIMA J, SANJAY P B

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W

Manufacturing graphene based material, preferably nitrogen-sulfur dual doped grapheme used in polymer composite, catalyst supporter, sensor or energy storage, involves functionalizing graphene oxide via thiol-ene click chemistry.

SINH L H, LUONG N D, SEPPALA J, SEPPAELAE J, SINH L, SEPPA L J

New ortho-terphenyl derivatives used for preparing graphene nanoribbons for thin film semiconductor for use in optical device, such as organic field effect transistor device, organic photovoltaic device or organic light-emitting diode.

SCHWAB M G, MULLEN K, FENG X, DUMSLAFF T, RUFFIEUX P, FASEL R, MUELLEN K

Graphene nanoribbon comprises repeating unit comprising edge carbons which can unambiguously be assigned as zigzag or cove type carbon atoms.

SCHWAB M G, MUELLEN K, FENG X, YANG B, DUMSLAFF T, FASEL R, RUFFIEUX P, LIU J, CAI J, SANCHEZSANCHEZ C, MULLEN K, SANCHEZ S C, TSAI J, MILLEN K

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

New oligophenylene monomer useful for preparing a polymeric precursor for producing graphene nanoribbons useful in an electronic, optical, or optoelectronic device.

SCHWAB M G, NARITA A, FENG X, MUELLEN K, MULLEN K, SCHWAB M G S, SCHVAB M G, MILLEN K