国家/地区 美国（7） 韩国（4） 中国（2） 世界知识产权组织（2）
IPC部 C（7） H（7） B（2）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人
公开年 2015（5） 2014（2）
申请年 2014（7）
专利权人

Method for increasing service lifetime of electronic apparatus placed within compartment of vehicle or on exterior of vehicle, involves placing graphene coating layer on environment-facing surface of electronic component of apparatus.

LI A W, HUNT J H, HOWE W R

Preparation method of reduced graphene oxide (RGO) film, involves reducing graphene oxide thin film using chemical reduction method and pressure-assisted thermal reduction method, respectively, to form reduced graphene oxide film.

KIM S H, JANG J, SHIN K, SHIN K H

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Activated expanded graphite oxide, useful in a monolayer graphene sheet and an electrode of an ultracapacitor, comprises a dopant comprising a non-metal e.g. nitrogen.

RUOFF R S, ZHANG L L, STOLLER M D

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y