国家/地区 中国（9） 美国（6） 台湾（5） 世界知识产权组织（2）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C23C016/26（5） B82Y030/00（4） B82Y040/00（4）
C01B031/04（3） C01B032/184（3） C01B032/194（3）
C23C016/455（3） C23C016/56（3） B32B003/10（2）
C01B031/02（2） C01B032/168（2） C01B032/205（2）
H01L021/02（2） H01L021/285（2） H01L023/532（2）
发明人 WANG J（11）
公开年 2018（2） 2021（2） 2022（2）
申请年 2021（3）  2014（2）  2017（2） 
专利权人 APPLIED MATE.（2） HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）
WANG J（2）

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Method for improving graphene performance by wet soaking and low-temperature annealing, involves removing poly methyl methacrylate photo-resist remaining on graphene during transfer process by annealing in low-pressure and low-temperature atmosphere.

LI M, ZHENG S, WANG J

Method for enhancing photoreduction reaction driven by plasmons at interface comprises e.g. performing plasma metal-mediated light reduction after modification of cover glass surface with 3-aminopropyltriethoxysilane, immersing graphene oxide flakes, and performing sputtering.

LIU D, WANG J, SHENG H, LI Z, ZHU Y, LV G

Preparing wear-resistant self-lubricating coating on crane pulley wheel groove, comprises placing dichromium trioxide powder and graphene powder in ball mill, sintering dry powder under vacuum conditions and carrying out surface derusting.

GONG N, LU Y, BI C, MU S, DU P, HAN J, WANG J, YUE W, PENG C, WANG X, LI C, JIN Y, YANG Y, QIAO Y, XI Z, LI P

Preparing graphene surface-coated metal copper or nickel comprises e.g. pre-processing and processing the graphite oxide, and placing the graphite oxide after processing ultrasonic treatment to obtain oxidized graphene.

CHEN W, WANG J, CUI P, ZUO Y

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S

Carbon fiber film comprises carbon nanotube film containing carbon nanotubes joined end to end and extending along a same direction in which each carbon nanotube is joined with graphene sheets.

JIANG K, WANG J, FAN S, LIN X, LIU P

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H