国家/地区 美国（20） 中国（14） 日本（13） 世界知识产权组织（13） 韩国（9） 欧洲专利局（EPO）（7） 台湾（7）
IPC部 B（30）
IPC大类 C01（30）
IPC小类 C01B（30）
IPC C23C014/06（30）
发明人 HU S C（2） LIN I（2） SUNG C（2）
YU C（2）
公开年 2016（5） 2013（4） 2015（4） 2021（4） 2012（3） 2018（3） 2010（2） 2022（2）
申请年 2014（4）  2015（4）  2011（3）  2012（3）  2013（3）  2009（2）  2018（2）  2019（2）  2020（2）  2021（2） 
专利权人 FUJITSU LTD（2） HU S C（2） LIN I（2） SUNG C（2）
YU C（2）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Laminate used for electronic device such as display device, comprises substrate, layer containing compound having condensed polycyclic hydrocarbon structure, and layer containing conductive material.

NAOYA N, KAZUNORI T, NOSAKA N, TAKANASHI K

Producing two-dimensional material-polymer composite useful in transparent electrode, sensor, memory and solar cell, comprises e.g. forming monomer layer interposed between first and second two-dimensional material layer.

SUK S H, YUNE S I

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Method for ultrasonic-assisted three dimensional (3D) printing of turbocharged blades and nano-gradient coatings, involves mixing powder with composition ratio with nickel and cobalt with specified percentage of total component content of titanium carbon powder into three portions.

ZHAO C, XU S, ZHANG S, XUE X

Graphene quantum dot apparatus for e.g., photoelectric conversion device, has substrate and graphene quantum dots on substrate, with each quantum dot having armchair-type first edge parallel to first direction and armchair-type second edge.

YAMAGUCHI J

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T