国家/地区 世界知识产权组织（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C23C016/52（10）
发明人
公开年 2013（3） 2012（2） 2014（2） 2021（2）
申请年 2013（4）  2012（2）  2020（2） 
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Forming graphene film on one or more surfaces of metal substrate involves heating metal substrate defining one or more surfaces to exposure temperature, and restricting metal flux from one or more surfaces at the exposure temperature.

VAN BAARLE D, VAN RIJN R

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Apparatus for growing carbon nanostructure i.e. graphene, on fiber for current carbon nanotube synthesis technique, has substrate inlet sized before growth zones to allow spoolable length substrate to pass through growth zones.

MALECKI H C, DAHNE J L, LOEBACH J P, GAIGLER R L, LEDFORD J T, MALECKI H, DAHNE J, LOEBACH J, GAIGLER R, LEDFORD J

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X