国家/地区 美国（9）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C23C016/30（9）
发明人 LEE S（2） SEO S（2） SEO S A（2）
公开年 2015（2） 2016（2） 2021（2）
申请年 2011（2）  2015（2）  2016（2） 
专利权人 SAMSUNG ELEC.（2）

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Device comprising physical properties controlled by microstructure, comprises base layer having patterned surface, and two-dimensional structure layer formed on patterned surface of base layer.

CHEN T, HO S, HSIEH Y, CHANG C, CHANG C H

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Production method for obtainment of three-dimensional closed graphene-based nano/microstructures involves flowing second fluid through second flow path and exiting through second fluid exit such that second fluid covers first fluid.

MENCELOGLU Y Z, OKAN B S, YILDIZ M, SANER OKAN B

Production of two-dimensional nanomaterial e.g. graphene used in electronic device, involves forming two-dimensional nanomaterial on liquid surface containing molten eutectic compound, of substrate by chemical vapor deposition.

BABENKO V, GROBERT N

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S