国家/地区 美国（18） 韩国（11） 世界知识产权组织（11） 日本（7） 中国（6） 欧洲专利局（EPO）（5） 台湾（5） 英国（2）
IPC部 C（27）
IPC大类 C01（27）
IPC小类 C01B（27）
IPC C01B031/04（24） C23C016/26（19） C01B032/186（9）
C01B031/02（6） B32B018/00（4） B82Y040/00（4）
C01B032/194（4） C23C014/06（4） C23C016/02（4）
C23C016/50（4） C23C016/56（4） B32B009/00（3）
B82Y030/00（3） C01B032/182（3） C01B032/184（3）
发明人
公开年 2016（27）
申请年 2015（27）
专利权人

N-doping of graphene for N-doped graphene oxide/graphene bilayered structure, involves forming graphene oxide by oxygen-plasma treatment of graphene, transferring graphene oxide to another graphene and doping with functional group.

CHO H J, SEO Y M, WHANG D

Packing apparatus for protecting graphene, comprises synthesizing chamber for defining space for synthesizing graphene on metallic foil, and first and second roll chamber formed respectively on both sides of synthesizing chamber.

CHO S W, KIM K S, KIM Y J, LEE I B

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Low temperature plasma-based process for preparing substrate coated with graphene-containing thin film, involves plasma-depositing film onto substrate via vapor deposition process, and subjecting layered substrate to laser treatment.

CAFFIO M, MARQUORDT C, ARVIDSEN J H, HAUPT R A B

Low-reflection graphene used in e.g. optical component, comprises graphene layer having surface parallel to specific direction, and another graphene layer in direction which intersects specified direction, where both layers form recess.

UEKUSA K, SHIMADA N, YAZAWA K, YAMADA T, HASEGAWA M, SHIMADA NAYUTA, YAZAWA KENJI, YAMADA TAKATOSHI, HASEGAWA MASATAKA, UEKUSA KAZUTERU

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Chemical vapor deposition (CVD) method for growing large area graphene at low cost, involves using untreated rolled metal as substrate of CVD graphene growth and using surface of residual grease as carbon source of graphene growth.

CHENG H, MA L, REN W