国家/地区 中国（13）
IPC部 C（13） B（5） H（5）
IPC大类 C01（13）
IPC小类 C01B（13）
IPC C01B031/04（12） C23C016/26（6） C01B031/02（5）
C23C014/34（3） C23C014/58（3） B82Y040/00（2）
C01B032/186（2） C23C014/06（2） C23C016/44（2）
C23C020/06（2） H01B005/14（2） H01B013/00（2）
H01G009/042（2） H01G011/36（2） H01L031/028（2）
发明人 SONG J（3） FAN T（2） LIU Y（2）
MIN Y（2） TONG S（2） ZHANG L（2）
公开年 2014（13）
申请年 2013（13）
专利权人 NANJING XINY.（2） YANCHENG ZEN.（2）

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H

Copper foil used in manufacture of graphene, has preset surface roughness, and contains copper plating layer and/or copper sputter layer.

KOHIKI MICHIYA, SAKAGUCHI KAZUHIKO, KOHIKI M, SAKAGUCHI K, MICHISHITA N

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Silicon carbide substrate graphene production device includes quartz heating cavity, heating cavity inner bucket, heating chamber, opening cavity, top cover, temperature measuring window, air inlet, air outlet and cooling water exit.

GAO Y, SONG J, WANG J, ZHANG H

Preparation of transparent conductive graphene thin film used for e.g. organic light-emitting diode, by performing Hummers with carbon material, dispersing graphene oxide in organic solvent and substrate, and opening water groove.

FAN T, LIU Y, MIN Y, SONG J, TONG S, ZHANG L

Preparing large area multifunctional graphene thin film comprises ultrasonically dispersing graphite oxide in acidic solution, then adding conductive polymer monomer and oxidizing agent, and reacting and filtering mixture, then washing.

FAN T, LIU Y, MIN Y, SONG J, TONG S, ZHANG L

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Forming thin graphene film involves heating graphene growth substrate in high temperature area, applying accelerating and screening electric fields in anode, then heating, introducing carbonaceous gas and screening negatively charged ions.

YAN S, ZONG Z, MA Y, NIU S, TATACHENKO V

Graphene growth device comprises graphene deposition system, deposition furnace and trolley.

JIN H, LIU Z, PENG P, ZHOU Z