国家/地区 世界知识产权组织（22）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC C23C016/26（14） C01B032/186（10） C23C016/44（5）
H01L021/02（5） C01B032/182（4） C01B032/194（4）
C23C016/02（4） C23C016/54（4） H01L021/768（4）
B82Y030/00（3） C23C016/32（3） C23C016/455（3）
C23C016/50（3） C23C016/56（3） H01J037/32（3）
发明人 MATSUMOTO T（3） HEE L（2） HYUN L J（2）
IFUKU R（2） IMSUNGWOO（2） JEON Y M（2）
LEE H S（2） LIM H H（2） LIM J（2）
LIM J C（2） LIM S W（2） PARK J G（2）
公开年 2022（10） 2021（9） 2023（3）
申请年 2021（22）
专利权人 TOKYO ELECTR.（4） APPLIED MATE.（2） DAEJOO ELECT.（2）

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U

Laminate used for electronic device such as display device, comprises substrate, layer containing compound having condensed polycyclic hydrocarbon structure, and layer containing conductive material.

NAOYA N, KAZUNORI T, NOSAKA N, TAKANASHI K

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Structure useful in sliding member and connector, comprises structure in which nanocarbon material is arranged on surface of metal.

KAZUOMI S, KAZUHIRO T, YASUHIRO Y, MAYUMI K, RYOTA Y, SATO K, TOKUNAGA K, YUZUHARA Y, KOSAKA M, YUGE R