国家/地区 美国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7） C30B029/02（6） C23C016/26（4）
C30B025/18（4） B82Y040/00（3） C01B031/02（3）
C01B032/186（3） B82B003/00（2） C01B032/182（2）
C01B032/188（2） C23C016/02（2） C23C016/44（2）
C30B001/02（2） C30B025/10（2） C30B025/16（2）
发明人 TOH C T（2）
公开年 2015（7）
申请年 2014（4）  2013（2） 
专利权人 UNIV SINGAPO.（2）

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of ordered graphene structure used for multitouch capacitive panel, involves exposing substrate to laser beam in presence of carbon source and moving substrate or laser beam relative to other, or decreasing laser beam power.

OEZYILMAZ B, TOH C T

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Making graphene film comprises configuring metal substrate to form interior surface of substrate in fluid communication with gaseous environment, loading into chemical vapor deposition apparatus, heating and providing hydrogen and carbon.

RUOFF R S, CHEN S