国家/地区 韩国（5） 美国（4） 世界知识产权组织（2）
IPC部 B（6） C（6） H（6）
IPC大类 B01（6）
IPC小类 B01J（6）
IPC B01J019/08（6）
发明人 CHOI I（2） CHOI I S（2） LEE K（2）
LEE K J（2）
公开年 2012（6）
申请年 2011（4） 
专利权人 KOREA ADV IN.（2）

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Patterning method of graphene used in graphene device, involves processing ring element of graphene oxide for patternizing laser irradiated in phase, during rising condition.

CHOI K S, KIM S Y, KWON G C, PARK Y S

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Controlling number of graphene layers to form mono/bilayer graphene, used e.g. in sensor, comprises forming graphene on first surface of first substrate, forming second substrate on second surface of first substrate and irradiating graphene.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J