国家/地区 韩国（4）
IPC部 C（7） H（5）
IPC大类 C01（7） C23（7） H01（4）
C30（2）
IPC小类 C01B（7）
IPC C23C016/26（7）
发明人
公开年 2023（7）
申请年 2021（7）
专利权人

Synthesizing surface of aluminum oxide graphite for high-purity carbon materials, comprises e.g. raising temperature of reactor, placing aluminum oxide nanoparticles in inner center of reactor, and injecting reaction gas into reactor.

KIM C D, NAMKEE S

Flexible graphene thin film used for transparent electrode devices, comprises flexible substrate, titanium buffer layer grown on one side of flexible substrate by sputtering and graphene thin film layer grown in-situ in same equipment.

YOON S G, IREH H

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Controlling stress of amorphous carbon film, comprises depositing first amorphous carbon layer on substrate, and stacking graphene layer on amorphous carbon layer, and depositing second amorphous carbon layer on graphene and carbon layer.

KIM K

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S