国家/地区 中国（93）
IPC部 C（93） B（26） H（19）
G（5） F（4）
IPC大类 C01（93） C23（16） H01（15）
B82（7） C22（6） B21（5）
B30（5） C04（5） B32（4）
C09（4） G01（4） H05（4）
B01（3） B22（3） B08（2）
IPC小类 C01B（93）
IPC C01B032/186（93）
发明人 ZHANG Y（11） DUAN Y（10） SHAO L（10）
SHI H（10） LI X（9） HUANG D（7）
LI Z（7） WANG W（7） LI Y（6）
WANG Z（6） LI C（5） XU X（5）
ZHANG L（5） CAI J（4） JIANG H（4）
公开年 2022（93）
申请年 2022（64）  2021（25）  2020（4） 
专利权人 CHINESE ACAD.（10） CHONGQING GR.（10） CHANGZHOU 2D.（5） JIANGSU JIAN.（5）
GUANGDONG MO.（4） CHANGZHOU SI.（3） CHONGQING GR.（3） UNIV NORTHWE.（3）
BEIJING GRAP.（2） CRRC IND RES.（2） FUJIAN MINXI.（2） INST METAL R.（2）
SHANGHAI INS.（2） UNIV DALIAN .（2） UNIV KUNMING.（2） UNIV SOOCHOW（2）
UNIV XIAMEN（2）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Device for producing roll-to-roll graphene film on substrate, has high temperature process chamber which is rotatably connected with at least two pairs of conveying rollers, and provided with driving device for driving two substrates to attach with each other.

JU Y, YI J, WANG D, LU W, WANG W

Flower spherical graphene material useful for anode pole piece used in sodium-based dual-ion battery, comprises multiple two-dimensional petal-shaped sheet structure, and has three-dimensional channel structure.

DENG B, SHI X, LIU T, ZHANG Y, WANG J, MO R

Preparation method of composite material graphene, involves regulating pulse current density under oxygen-free atmosphere to make metal substrate return controlling pulse current density to make metal substrate deposited with graphene return and re-crystallize again, growing to form graphene film.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

In-situ preparation method of carbon material comprises adding substrate and metal-based solution in the catalytic zone of a reactor with protective gas and controlling the catalytic reaction process, sending substrate and metal-based solution in the catalytic zone into reaction zone of the reactor.

JI Z, ZHANG T, DONG Q, GAO C, HE Y, CHU D, BAI W

Preparing vertical oriented graphene by using carbon dioxide and methane as raw material, comprises pre-heating substrate material needing to grow vertical orientation graphene, and introducing mixed gas of carbon dioxide/methane and growing graphene.

CEN K, YAN J, SU M, YANG H, BO Z

Multi-boundary graphene foam with controllable porosity and aperture used in e.g. conductive material applications, comprises graphene sheets growing vertically on deposition substrate in multi-boundary graphene foam, and forming bridge connecting adjacent hollow graphene spheres.

CHEN G, LI T, CHEN H, SONG Q, MENG J, ZHANG Y

Iron-based substrate for producing graphene, is derived from factory waste carbon iron sheet having specified thickness, surface roughness and carbon content.

ZANG X, CAO N, QI H, SHAO Q

Method for preparing single-layer alternating graphene, involves placing copper foil in gas phase deposition furnace, introducing argon gas into gas phase deposition furnace, and introducing hydrogen into gas phase deposition furnace and annealing copper foil.

ZHANG X, ZHOU T, XU X

Preparation of graphene film layer by plasma-assisted chemical vapor deposition on surface of monocrystalline silicon used in semiconductor application, involves placing monocrystalline silicon in vapor deposition tube furnace as substrate, and performing deposition using carbon monoxide gas.

LV H, HE F, LIU L