国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） C30（3）
IPC小类 C01B（7）
IPC C01B032/188（7）
发明人
公开年 2020（3） 2021（3）
申请年 2020（7）
专利权人

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B

Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.

Preparing graphene semiconductor useful for manufacturing device, comprises e.g. flattening surface of silicon carbide substrate, heating, subliming and desorbing silicon from carbon atomd and depositing semiconductor material particles.

LV Z, LI J, SI C

Gas detection device based on silicon carbide graphene material, has matrix contact metal layer plated on graphene layer of composite silicon carbide graphene material, and zinc oxide particle layer coated on metal layer.

INVENTOR U