国家/地区 中国（49）
IPC部 C（49）
IPC大类 C01（49） C30（11） H01（11）
B82（7） C23（6） B32（3）
B81（2） C03（2） C04（2）
G01（2）
IPC小类 C01B（49）
IPC C01B032/188（49）
发明人 LIU X（10） WEI X（7） WEI Z（7）
LI Y（5） ZHANG Y（4） LIU Y（3）
WANG Y（3） CHEN J（2） CHEN Z（2）
CHENG X（2） HU T（2） LI L（2）
LI Z（2） MA D（2） MA F（2）
公开年 2018（13） 2017（11） 2020（6） 2021（4） 2022（4） 2011（3） 2012（2） 2015（2）
申请年 2017（19）  2020（7）  2016（4）  2019（4）  2022（4）  2009（2）  2011（2）  2012（2）  2015（2） 
专利权人 CHENGDU GELA.（7） 55TH RES INS.（2） BEIJING HUAJ.（2） GUARDIAN GLA.（2）
GUARDIAN IND（2） GUARDIAN IND.（2） SHANGHAI INS.（2） UNIV SHANDON.（2）
UNIV XIAN JI.（2）

Preparing in-situ self-generating germanium tungsten carbide synergistic reinforced tungsten copper composite material, involves mixing copper powder, micro-activating element and alcohol, pressing, calcining porous tungsten skeleton and performing infiltration sintering porous tungsten skeleton.

LIANG S, XIAO P, ZOU J, YANG B, DENG N, CHEN Z, YANG J, ZHANG Q

Preparing in-situ heteroepitaxial graphene-coated silicon material useful in lithium-ion battery, comprises e.g. removing magnetic impurities in silicon raw material, drying, sand milling, reacting with fluorocarbon radicals, spray drying, low heating and carrying in-situ heterogeneous epitaxy.

ZHOU S, SHEN J, CHEN M, LUO X, HOU Q, ZHANG X

Preparation of graphene array, by coating boron trioxide on surface of silicon carbide foam, annealing to obtain substrate, pyrolyzing epitaxial graphene on substrate, subjecting to physical gas phase transmission treatment, and peeling off surface of foam with graphene array on surface.

WEI G, LI L, SU Y, ZENG J, DING L

Growing furnace for graphene production and processing, has lower part of front end of refrigerating box is fixedly connected with refrigerating mechanism.

YANG K, CHEN W

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Method for growing flat graphene with uniform layer thickness, comprises e.g. pyrolyzing silicon carbide on silicon carbide wafer under ultra-high vacuum conditions by controlling temperature of silicon carbide wafer.

ZHANG Y, JIN S, WANG C

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G