国家/地区 中国（15）
IPC部 C（15）
IPC大类 C01（15） H01（15） H05（7）
B82（6） C07（5） B32（4）
C08（3） C09（3） G02（3）
B01（2） B05（2） G06（2）
IPC小类 C01B（15）
IPC H01L051/50（15）
发明人 DICHTEL W R（2） FENG X（2） HINTERMANN T（2）
KIMURA N（2） MUELLEN K（2） MULLEN K（2）
SHIMIZU K（2）
公开年 2012（6） 2014（3） 2013（2） 2015（2）
申请年 2012（5）  2013（3）  2011（2）  2014（2） 
专利权人 BASF SE（3） BASF CHINA C.（2） KIMURA N（2） MAX PLANCK G.（2）
SHIMIZU K（2） SONY CORP（2） UNIV CORNELL（2）

Graphene quantum dot fluorescent film used for preparing laser diode light emitting device comprises graphene quantum dot aqueous solution dissolved in dimethylformamide or aqueous solution, and silane coupling agent KH-792.

YANG Y, HE P, ZHENG J, LIU X, XIAO B, XU B

Preparing flexible supporting chlorine doped graphene quantum dot thin film comprises e.g. mixing liquid paraffin, chloroform, ultrasonicating to obtain graphene quantum dot, mixing with polydimethylsiloxane, curing agent and agitating.

TANG L, JI R, XIANG J, HU S, LI Y, YUAN S, WEI H, HAN F

Method for preparing graphene layer of e.g. electronic device, involves heating portion of graphene oxide layer by laser irradiation at specific laser output power, so that portion of graphene oxide is chemically reduced to graphene.

BALKENENDE A R, GIESBERS A J M, VAN DER TEMPEL L

Purifying graphene nanoribbons, involves contacting composition comprising graphene nanoribbons and contaminants with liquid medium comprising dispersant, and dispersing nanoribbons in liquid medium and subjecting the dispersion.

HINTERMANN T, SCHWAB M G, CHA K C, WEITZ T, SCHAEFER A, MUELLER I B, WEITZE T, SCHWAB M G S, CHA K C P

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Manufacturing laminated structure used in e.g. display, comprises bonding layer of graphene film on first substrate to second substrate with adhesive resin layer, removing first substrate and forming transparent layer on graphene film.

KIMURA N, SHIMIZU K, FUKUDA T

Conductive material useful in an electric device, comprises a carbon substance comprising a graphene (a single-layered graphene or a multilayered graphene), and a metallic substance mixed with and/or laminated to the carbon substance.

NAITO K, YOSHINAGA N, NAKANO Y, AKASAKA Y, MATAKE S, AKITA M, MATEKE S

Electrode, useful in electronic device e.g. organic light-emitting device, organic solar cell or organic memory device, comprises graphene-containing layer, and layer having work function gradient formed on graphene-containing layer.

LEE T, HAN T, AHN J, LEE Y, WOO S, LEE T W, HAN T H, AHN J H, YI Y B, LEE Y B, WOO S H, LI R