国家/地区 中国（21）
IPC部 C（21）
IPC大类 C01（21）
IPC小类 C01B（21）
IPC C01B031/04（19） B82Y030/00（8） B82Y040/00（6）
C01B031/02（5） C09K011/65（5） C09K005/14（4）
C08K003/04（3） C09K003/00（3） B32B009/04（2）
C01B032/182（2） C01B032/184（2） C01B032/19（2）
C01B032/194（2） C09D011/52（2） H01L023/373（2）
发明人 XIE X（3） DU Y（2） LIU J（2）
LIU Y（2） TANG N（2） WANG H（2）
WANG L（2） ZHANG Y（2）
公开年 2014（11） 2013（8） 2015（2）
申请年 2013（21）
专利权人 SHANGHAI INS.（3） DONG JIN SEM.（2） UNIV NANJING（2）

Graphene composite comprises anion amphiphilic surfactant, graphene formed by reducing or peeling of carbon compound, and cationic polymer obtained by polymerizing cationic monomer containing nitrogen atom(s).

LEE S Y, LEE C, CHOE H, GONG S Y, LI X, LI Z, CUI X, KONG X

Energy device used in supercapacitor, consists of paper based substrate having top surface and bottom surface, and graphene oxide and carbon nanotube composite deposited on top surface.

WANG W, GUO S, OZKAN C S, OZKAN M

Preparing graphene fluorescent nanomaterial comprises mixing graphite powder with tetrahydrofuran, dispersing mixture, adding alkali metal and naphthalene to mixture, reacting mixture, adding halogenated organic solvent, washing and drying.

DENG S, ZHENG L, FENG L, HUANG R, XIE S

Composite nanophase absorbing material obtained by uniformly loading cobalt and graphene on a thin surface, and drilling to form nano-granule.

LIN S, WANG F, YU J, ZHU H

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Forming nitrogen and sulfur co-doped graphene quantum dots, comprises heating mixture of carbon source and compound containing nitrogen and sulfur in autoclave.

YU T, DONG Y, LI C M, OTHER I A N T

Thermal radiation film for e.g. electronic devices comprises heat-transfer layer formed by uniformly dispersed graphene microparticles and carbon nanotube.

KAGAWA S, SEIJI K

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Preparation of graphene quantum dots for, e.g. FETs, involves dispersing carbon material in sulfuric acid, adding potassium permanganate and hydrogen peroxide, filtering, dialyzing, evaporating water, and reducing formed oxide dots.

FAN T, LIU Y, MIN Y, SONG J, TONG S, ZHANG L

Purifying graphene oxide quantum dots involves mixing aqueous solution of oxidized graphene quantum dots with surfactant to form mixed solution, followed by adding non-polar solvent, extracting graphene oxide quantum dots, and drying them.

XIE X, JIANG M, DING G, SUN J, HE P