国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC G03F001/62（6）
发明人 YANASE M（2） YANASE Y（2）
公开年 2018（2）
申请年 2016（2） 
专利权人 SHINETSU CHE.（2） SHINETSU CHE.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Method for manufacturing pellicle for lithographic apparatus involves removing first substrate portion to form freestanding membrane from graphene layer, in which freestanding membrane is supported by second substrate portion.

PETER M, ABEGG E A, GIESBERS A J, KLOOTWIJK J H, NASALEVICH M A, VAN DEN EINDEN W T, VAN DER ZANDE W J, VAN ZWOL P, VERMEULEN J P M, VLES D F, VOORTHUIJZEN W, GIESBERS A J M, VAN ZWOL P J, VOORTHUIJZEN W P, VAN DEN EINDEN W T A J, VERMEULEN J P M B