国家/地区 西班牙（11）
IPC部 B（11）
IPC大类 B82（11）
IPC小类 B82Y（11）
IPC C01B031/04（11）
发明人 CHIBA G（4） CHIBA Y（4） YOSHIHIRO C（3）
CHIBA YOSHIHIRO（2）
公开年 2012（4） 2011（3） 2013（2）
申请年 2012（5）  2011（2）  2014（2） 
专利权人 JX NIPPON MI.（4） NIPPON MININ.（4） NIPPON MININ.（4） NIPPON MININ.（2）

Synthesizing reduced graphene oxide on a substrate from seedlac, comprises preparing the seedlac solution in alcohol having specified carbons, dipping the substrate into the solution, and heating the substrate which is a metallic sheet.

SHYAM K C, MANISH K B, TAPAN K R, SUMITESH D, RANJAN K S, YASHABANTA N S, ASHIT K P, VIKAS C S, CHOUDHARY S K, BHADU M K, ROUT T K, DAS S, SAHU R K, SINGHBABU Y N, PRAMANICK A K, SRIVASTAVA V C

Preparing graphene structure of 1-5 layers or controlling number of layers, involves introducing common substrate or substrate with powdered metal or substrate with definite pattern of metal inside reactor for chemical vapor deposition.

BERTRAN SERRA E, FREIRE SOLER V M, RAMIREZ SANCHEZ A, PASCUAL MIRALLES E, ANDUJAR BELLA J L

Copper foil used for manufacturing graphene, comprises copper with specific purity.

CHIBA Y, ONO T, CHIBA G

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Producing graphene oxide nanoplatelets and derived products, comprises e.g. dosing e.g. a hydrocarbon or mixture of hydrocarbons, placing dosed compounds inside a furnace, and obtaining intermediate material comprising carbon nanofilaments.

MERINO S C, MARTIN G I, VARELA R H, MERINO A M D P, MERINO SANCHEZ C, MARTIN GULLON I, VARELA RIZO H, MERINO AMAYUELAS M D P, RIZZO H V, SANCHEZ C M, OMARYERAS M D P M, GULLION I M

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V