国家/地区 日本（6）
IPC部 C（6）
IPC大类 C01（6） C23（6） B01（2）
C30（2） H01（2）
IPC小类 C01B（6）
IPC C23C016/26（6）
发明人
公开年 2014（6）
申请年 2012（2）  2013（2）  2014（2） 
专利权人

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N

Manufacture of single crystal graphene involves thermal decomposition of carbon source by guiding vaporized carbon source vapor with camphor to a heated substrate, and thermally decomposing the compound on the substrate surface.

SHARMA S, TANEMURA M, UMENO M, KALITA G

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Apparatus for manufacturing graphene film used for e.g. transparent electrode, has system for supplying film-forming material gas containing carbon, stage and counter electrodes, and device for applying direct current pulse voltage.

TSUKAHARA N