国家/地区 波兰（11）
IPC部 C（11） B（8） H（2）
IPC大类 C01（11） B82（7） B01（2）
C30（2） H01（2）
IPC小类 C01B（11）
IPC C01B032/184（11）
发明人 CIOCHON P（2） KOLODZIEJ J（2） LIPINSKA L（2）
公开年 2018（2） 2020（2） 2021（2）
申请年 2016（2）  2019（2） 
专利权人 MATERIALOW E.（3） UNIV JAGIELL.（2）

Production of micro/mesoporous conductive polymer involves adding aqueous suspension of graphene oxide to hydrazine, vigorously stirring at room temperature, filtering obtained gelling product, drying, and annealing under atmosphere of hydrogen at preset pressure.

KULA P, NIEDZIELSKI P, KACZMAREK L, SZYMANOWSKI H, KACZOROWSKI W, JASTRZEBSKI K, CLAPA M, ZAWADZKI P, WARGA T, KLICH M

Manufacture of graphene roses involves homogenizing and ultrasonically processing aqueous solution of graphite or graphene plates and water in ultrasonic bath, adding sodium hydroxide, mixing, ultrasonically processing and heating.

KAMEDULSKI P, ZIELINSKI W, LUKASZEWICZ J P, NOWAK P

Obtaining a silicon carbide (SiC)-graphene surface composite with controlled surface morphology for use in e.g., electronics by subjecting SiC substrate, after initial preparation, to annealing in beam of silicon atoms and cooling.

CIOCHON P, KOLODZIEJ J

Manufacture of graphene flakes involves purging reduced graphene oxide with inert gas, and carrying out thermal reduction by rapidly heating to preset temperature.

FRYCZKOWSKI R, SIERADZKA M, JANICKI J

Continuously producing multilayer graphene tape by obtaining free carbon atoms from graphite rod heated by photons from diode lasers in chamber through which helium gas flows and transfers kinetic energy to deposit carbon to substrate.

BEDNAREK J

Reduction of graphene oxide involves pretreating graphene oxide in strongly acidic suspension containing sulfuric acid, and subjecting to reduction reaction with phosphoric acid or its salts such as hypophosphate.

WOLUNTARSKI M, DJAS M, KOWIORSKI K, LIPINSKA L, MARCINIAK I, MARCJANIUK A

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Preparing graphene comprises preparing solution of water, ethanol, ammonia water, resorcinol, potassium oxalate and formalin, charring the material and holding samples at set temperatures and rinsing material with distilled water and drying.

SIBERA D, NARKIEWICZ U, MICHALKIEWICZ B, MORAWSKI A W, WROBEL R

Graphite-type carbon raw material used as graphene precursor, has rhombohedral system graphite layer and hexagonal system graphite layer in ratio more than preset value, as measured using peak intensities specific planes of layers.

HASEGAWA S, KAMIYA N, SHOJI H, NAGISA K, HASEGAWA SHOJI, KAMIYA NAGISA, SHEN Y

Chemical reduction of graphene oxide useful in industrial application for its increased electrical conductance involves using hypophosphorous acid and/or hypophosphite ions as reducing agents and sulfur dioxide, sulfurous acid as catalyst.

LIPINSKA L, JAGIELLO J, KOZINSKI R, BATIJEWSKI R, NAJDEKER E