国家/地区 台湾（57）
IPC部 C（57） B（32） H（31）
G（4） F（3）
IPC大类 C01（57） H01（28） B82（18）
B01（13） C08（13） C09（13）
C23（8） C07（7） H05（7）
B05（3） B32（3） C25（3）
C30（3） B23（2） B29（2）
IPC小类 C01B（57）
IPC C01B032/184（57）
发明人 CAI J（3） FASEL R（3） FENG X（3）
LEE J（3） LEE K（3） MUELLEN K（3）
MULLEN K（3） RUFFIEUX P（3） ANZELMO B H（2）
CAI Y（2） CHANG J（2） CHEN C（2）
DO S（2） DO S H（2） DO SEUNG H（2）
公开年 2021（12） 2022（9） 2018（8） 2015（7） 2017（6） 2013（4） 2016（4） 2014（2） 2019（2） 2023（2）
申请年 2020（9）  2021（9）  2015（7）  2018（6）  2014（5）  2016（5）  2012（4）  2013（3）  2017（3）  2019（3）  2022（2） 
专利权人 BASF SE（3） LYTEN INC（3） UNIV CHUNG Y.（3） DAICEL CORP（2）
HANWHA CHEM .（2） HON HAI PREC.（2） IND TECHNOLO.（2） LG CHEM CO L.（2）
LG CHEM LTD（2） MAX PLANCK G.（2） NISSAN CHEM .（2） NISSAN CHEM .（2）
PARAGRAF LTD（2） RAYMOR IND I.（2） SEMICONDUCTO.（2） TAIWAN SEMIC.（2）
UNIV NAT CEN.（2） UNIV TSINGHU.（2） XU B（2）

Production of solid carbon used in composition of matter, involves receiving carbon dioxide and water in reactor, dissociating carbon dioxide and water to form dissociated species, exposing dissociated species to electric field to facilitate reactions, generating and outputting solid carbon.

STOWELL M W, SIENKO L, STOWELL W M

Making three-dimensional water-based graphene involves using organic matter as substrate, using high and low temperature differences and physical reactions to carbonize it and change its structure, and transforming it into graphene.

WANG C S

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Composite material for electromagnetic wave shielding or electromagnetic wave absorption, comprises electromagnetic wave absorbing materials containing two-dimensional graphene sheets, which is obtained by crushing carbon raw material through cavitation principle in liquid phase exfoliation method.

XIE Y, HE X, LIU W, HO H, HSIEH I

Preparing graphene nanoribbon composite structure, comprises e.g. providing substrate comprising protrusions arranged at intervals, growing graphene film on growth substrate, and setting adhesive layer on surface of graphene film.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Preparing graphene conductive film, comprises allocating graphene, surfactant and solvent, mixing graphene and surfactants and solvent into paste, placing paste on substrate to form film, drying film, and thermally annealing film.

CHEN M, WU C, CHUNG M, KOO H

Preparing transparent solution of lipophilic graphene quantum dots, comprises e.g. stirring graphite powder in pulverizer and adding water and active interface agent for stirring, and taking out graphite in form of foamed solution.

XU B