国家/地区 韩国（7）
IPC部 B（7）
IPC大类 B01（7） C01（7） H01（5）
B82（4） C23（2）
IPC小类 B01J（7）
IPC B01J019/12（7）
发明人 FISHER T S（2）
公开年 2013（7）
申请年 2012（4）  2013（3） 
专利权人 FISHER T S（2） PURDUE RES F.（2）

Manufacture of graphene quantum dot involves forming carbon source beams by injecting carbon sources into thermal plasma jet, thermally decomposing carbon source, and flowing carbon source beams into tube connected to anode.

SUH J S, KIM J H, KIM J, LEE M W

Processing of graphene used for manufacture of graphene nanoribbons, involves irradiating ion beam to graphene using gas cluster ion beam apparatus, forming cluster and etching.

MATSUMOTO TAKASHI, MATSUMOTO T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Material useful to provide refrigeration, and for photovoltaic or thermionic power generation, comprises carbon allotrope (graphene or graphite) doped with boron nitride, and an alkali metal (potassium) intercalated within carbon allotrope.

FISHER T, FISHER T S

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S