国家/地区 日本（11） 世界知识产权组织（8） 美国（6） 中国（4） 欧洲专利局（EPO）（4） 韩国（4） 台湾（4） 印度（2）
IPC部 C（11）
IPC大类 C07（11） C01（7） B01（4）
H01（3） B82（2） C08（2）
IPC小类 C07B（11）
IPC C07B061/00（11）
发明人 ITAMI K（3） ISHIDA S（2） ITO H（2）
MATSUSHIMA K（2） NAKATSUJI H（2）
公开年 2014（3） 2021（3）
申请年 2013（3）  2021（2） 
专利权人 TAOKA CHEM C.（2） UNIV TOKAI N.（2）

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Hydrocracking catalyst used for hydrocracking carbon-heteroatom bond in substrate organic compound containing carbon-heteroatom bond, comprises at least palladium catalyst and carbon-based catalyst having Bronsted acid site.

TATSUYA K, YOSHIYUKI W, SHINJI U

Manufacture of naphthyl silole compound used for preparing graphene nanoribbons, involves reacting brominated/iodinated biphenyl compound with lanthanoid-and-lithium-containing ate complex, and reacting obtained lanthanoid complex with silyl compound.

ITAMI K, ITO H, MATSUSHIMA K, MURAKAMI K, NAKATSUJI H, ISHIDA S

Alkane dehydrogenation catalyst used for producing hydrogen production apparatus, comprises graphene atom vacancy structure, 3-hydrogenated atom vacancy structure and nitrogen-substituted atom vacancy structure.

KUSAKABE K, TAKAI K, NISHIKAWA M, LIU M, KAZUYUKI T A

Hydrogenation catalyst used for hydrogenation of biomass-derived hydrocarbon compound, comprises inorganic nanoparticles and nitrogen-doped reduced graphene oxide support for supporting inorganic nanoparticles.

KIM D, SINGH A K, KIM D P, AJAY, PYO K D

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Method for carrying metal on graphene oxide for metal-oxidation graphene complex, involves adding solution of metal salt or metal ion to oxidation graphene dispersion, and adding alcohol, N,N-dimethylformamide and/or tetrahydrofuran.

NISHINA YUTA

Manufacture of optionally substituted aryl group-substituted polycyclic aromatic compound used for manufacturing graphene, involves reacting polycyclic aromatic compound and boron compound substituted by optionally substituted aryl group.

ITAMI K, MOCHIDA K, KAWASUMI K, SEGAWA Y, KAJINO T

Manufacture of unsubstituted graphene compound involves subjecting polycyclic compound chosen from tetra-benzanthracene and tetraphenylbenzene to dehydrogenation condensation using Lewis acid and high valence iodine compound.

KIKUZAWA Y, MORI T, TAKEUCHI H