国家/地区 中国（11）
IPC部 C（11）
IPC大类 C23（11） C21（3） C22（3）
B22（2） C25（2） H01（2）
IPC小类 C23F（11）
IPC C21D008/02（2） C23F013/12（2） C23F017/00（2）
发明人 LI Y（2） WANG X（2） ZHANG X（2）
ZHAO P（2）
公开年 2022（11）
申请年 2022（11）
专利权人 YANGZHOU POL.（2）

Acid cleaning process of corrosion resistant stainless steel belt comprises performing solid solution treatment on stainless steel plate, annealing once, finish rolling, and secondary annealing and performing four stages of coating treatment.

YU C, JI F, XING Y, ZHANG X, WU M, LI Y, WU B, WANG Y, SHAN C, BEN H

Conductive mortar, comprises cement, quartz sand, water, sacrificial anode activator and expansion agent.

FAN Z, ZHAO J, ZHANG D, CHEN H

Organic composite passivation treatment liquid for hot galvanized sheet, comprises raw material of processing liquid comprising aqueous epoxy resin, organic corrosion inhibitor, nanoparticles, organic cosolvent, and water, which is prepared by adding all the materials, and stirring to form solution.

LUO J, XU J, RAN C, DONG X, GUO T, ZHAO P

Preparing self-lubricating graphene-metal base composite material involves performing surface micro-texture processing to metal base plate to obtain pre-processing substrate, synthesizing carbon fiber/graphene oxide powder.

WANG X, CHEN L

Preparing antirust agent comprises e.g. taking sulfonate, carboxylate and barium petroleum sulfonate, adding activator and deionized water, mixing triethanolamine and dodecenyl succinic acid, heating and stirring until the liquid becomes paste and stop stirring.

HE J

Method for manufacturing corrosion resistant aluminum brazing composite plate for use in automobile, involves performing hot rolling, primary annealing, cold rolling, secondary anneal and cooling to obtain corrosion-proof aluminum brazing composite plate.

DING D, DING X

Preparation of Z-type composite photoanode material used in anticorrosion of marine engineering concrete structural metal material, involves pretreating conductive glass, performing electrochemical deposition, and depositing tin sulfide layer on obtained graphene-manganese sulfide layer.

LI Y, FENG W, LIU J, JIANG H, YAN J, TANG H, CHENG H, YU Y, CHEN Y, JIN Z, WANG X, ZHANG X

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Directly growing patterned graphite on integrated circuit chip, involves cutting ultra-thin copper foil, pressing, placing chip sample in thermal chemical vapor deposition system, dipping into copper corrosion liquid, etching lower copper through a poly(methyl methacrylate) layer and drying.

HU L, DENG J, QIAN F, XIE Y, XU C

Preparing transmission electron microscope carrier net containing ultra-clean graphene carrier layer useful in situ characterization and tracking of liquid phase reaction comprises e.g. combining transmission electron microscope carrier with graphene film on surface of iron(III) chloride solution.

REN Q, ZHANG Y, ZHAO P