国家/地区 中国（6） 美国（4） 日本（3） 韩国（3） 欧洲专利局（EPO）（2） 法国（2） 印度（2） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C25D015/00（7）
发明人 GABEN F（2）
公开年 2021（4） 2020（2）
申请年 2020（6） 
专利权人

Silver-graphene composite plating layer, has layer main body provided with first nano-silver layer, silver-graphene layer and second nano-silver layer that are sequentially arranged on base body.

LI H, ZHAO K, ZHANG Q, CHEN B, GUO W, ZHU Z, ZHANG C, DING Y, PANG Z

Manufacture of lithium-ion battery used for e.g. phone and laptop, involves e.g. depositing dense layer comprising anode, cathode and/or electrolyte, by supplying substrate and suspension of non-agglomerated nanoparticles of material having preset size, and performing densification of dried layer.

GABEN F

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Doping method involves stacking sacrificial layer on doped layer, arranging doping material on the sacrificial layer, arranging electrodes on doping material and doped layer, and doping doping material into doped layer.

SON K, KIM T, SON A

Connector e.g. male connector, comprises electrical contact material containing metal base material and conductive coating layer containing phase made of metal other than gold, and phase made of gold or non-metallic conductive material.

KUBO T, OKADA M, SHIMIZU T, KAWAI H, KAWAI Y

Preparing flexible silicon carbide/graphene/manganese dioxide porous nano composite material, and solid supercapacitor used in textile wearable power supplies, involves placing ion membrane between two electrodes, laminating, and drying.

CHEN Y, ZHANG X

Preparation of graphene-based transistor communication materials for electrochemical transistor sensor by determining channel region between source and electrochemical transistor drain, adding graphene oxide solution and electrodepositing.

CHANG G, TAO T, MA M, FAN J, HE Y