国家/地区 美国（11） 韩国（7） 中国（6） 世界知识产权组织（6） 欧洲专利局（EPO）（5） 日本（4） 台湾（4） 印度（3） 法国（2）
IPC部 C（11）
IPC大类 C25（11）
IPC小类 C25D（11）
IPC H01L021/02（11）
发明人 GABEN F（2） LIPOMI D J（2） ZARETSKI A（2）
公开年 2021（3） 2011（2） 2015（2） 2016（2）
申请年 2020（3）  2016（2） 
专利权人 UNIV CALIFOR.（2）

Manufacture of lithium-ion battery used for e.g. phone and laptop, involves e.g. depositing dense layer comprising anode, cathode and/or electrolyte, by supplying substrate and suspension of non-agglomerated nanoparticles of material having preset size, and performing densification of dried layer.

GABEN F

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Doping method involves stacking sacrificial layer on doped layer, arranging doping material on the sacrificial layer, arranging electrodes on doping material and doped layer, and doping doping material into doped layer.

SON K, KIM T, SON A

Surface-metalized polymer article comprises polymer component, first layer composed of multiple graphene sheets and conducive filler coated on polymer component surface, and second layer of plated metal deposited on first layer.

LIN Y, LEE S, JHONG Y, ZHAMU A, JANG B Z, LI S

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Application method for coating layer of reduced graphene oxide on surface of holes in substrate of e.g. semiconductor involves immersing treated substrate in solution of metal ion to intercalate metal ions into graphene oxide (GO) layer.

DOW W, CHANG S, DOW W P, CHANG S C

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Composition useful in electrochemical energy storage devices, comprises a polymeric material containing active material particles, and graphene material particles forming a graphene network.

LU W, BUETTNERGARRETT J, KRYSIAK M