国家/地区 |
美国(24)![]() |
IPC部 |
B(24)![]() |
IPC大类 |
B82(24)![]() |
IPC小类 |
B82Y(24)![]() |
IPC |
B82Y030/00(24)![]() |
发明人 |
OGUNI T(6)
OSADA T(6)
TAKEUCHI T(6)
GABEN F(2) JO T(2) JO T J(2) KIDEOK S(2) KOKUNI T(2) LEE S(2) LEE S H(2) NAGATA T(2) NOMOTO K(2) PARK S(2) SEULKI P(2) SONG K(2) |
公开年 | 2013(4) 2017(4) 2011(3) 2021(3) 2012(2) 2020(2) |
申请年 | 2020(5) 2011(4) 2017(4) 2012(3) 2014(2) 2022(2) |
专利权人 | SEMICONDUCTO.(6) ILJIN MATERI.(2) |
TAKEUCHI T, OSADA T, OGUNI T
NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L
OGUNI T, OSADA T, TAKEUCHI T, NOMOTO K
OGUNI T, OSADA T, TAKEUCHI T
OGUNI T, OSADA T, TAKEUCHI T
ALVAREZ N, DEARMOND D, MALIK R, SHANOV V N, ZHANG L
JO T J, LEE S H, PARK S, SONG K D, TAE J J, SUNHYOUNG L, SEULKI P, KIDEOK S, JO T, LEE S, SONG K